2SC2389STPR

Single Bipolar Transistors Overview

The 2SC2389STPR is a small signal NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector current of 0.05 A and a collector-emitter breakdown voltage of 120 V. The device has a minimum DC current gain (hFE) of 390 and a maximum power dissipation of 0.3 W. It utilizes an SPT (Small Package Transistor) package with three through-hole terminals, designed for low noise applications in general-purpose switching and amplification circuits.

Single Bipolar Transistors Feature Summary

• Low noise performance suitable for sensitive signal processing
• High DC current gain ensuring efficient amplification
• Robust 120 V collector-emitter voltage rating for high-voltage switching

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• High-voltage switching applications
• Low noise audio pre-amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix STPR against official ROHM documentation to confirm the tape and reel packaging format. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet revision date to confirm technical specifications have not changed. Confirm availability status as distribution channels may vary.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with high voltage tolerance and low noise characteristics is required. The 120 V rating distinguishes it from standard 50 V or 60 V transistors. Consider the SPT package size for space-constrained through-hole designs requiring higher voltage handling than typical small-signal alternatives.

Single Bipolar Transistors Part Context

This part belongs to ROHM's small signal bipolar transistor family, specifically designed for general-purpose use. The 2SC series typically denotes NPN silicon transistors. The SPT package offers a compact form factor compared to traditional TO-92 packages while maintaining similar electrical characteristics for low-power applications.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching 120 V V(BR)CEO and 0.05 A I(C) ratings. Verify pinout compatibility and thermal dissipation capabilities before substituting with generic equivalents.