2SC2881-Y(TE12L,ZC

$0.62

Description：TRANS NPN 120V 0.8A PW-MINI
Series：-

SKU:e7e241371dd1 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2881-Y(TE12L,ZC is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A PW-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2881-Y(TE12L,ZC

Description：TRANS NPN 120V 0.8A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 100mA, 5V
Power - Max：500 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：PW-MINI
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2881-Y(TE12L,ZC

2SC2881-Y(TE12L,ZC

Single Bipolar Transistors Overview

The Toshiba 2SC2881-Y(TE12L,ZC) is a silicon NPN epitaxial transistor utilizing the PCT process. It features a collector-emitter voltage of 120 V and a maximum collector current of 800 mA. The device provides a typical transition frequency of 120 MHz at 100 mA. DC current gain ranges from 120 to 240 for the Y classification. Power dissipation reaches 500 mW on a ceramic substrate or 1 W without one.

Single Bipolar Transistors Feature Summary

High-voltage capability with a 120 V collector-emitter breakdown rating
High-speed switching performance characterized by a 120 MHz transition frequency
Small flat package design suitable for high-density mounting applications

Single Bipolar Transistors Applications

Voltage amplifier circuits
Power amplifier configurations
Switching regulator drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status, such as RoHS compatibility. Ensure the selected variant matches the required DC current gain classification for the intended circuit design. Consult the manufacturer's reliability handbook for appropriate derating methods under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling and fast switching speeds within a compact footprint. Evaluate the safe operating area curves to ensure operation remains within thermal limits. Consider the complementary 2SA1201 PNP transistor if a matched pair is necessary for push-pull amplifier stages.

Single Bipolar Transistors Part Context

This device belongs to the 2SC2881 series of general-purpose small signal transistors manufactured using Toshiba's PCT process technology. The series is designed for applications demanding high voltage ratings combined with rapid switching capabilities in a miniature surface-mount package.