2SC5916TLR

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC5916TLR is an NPN silicon epitaxial planar medium power transistor housed in a TSMT3 surface-mount package. It features a collector-emitter voltage of 30V and a continuous collector current rating of 2A, with a maximum power dissipation of 500mW at 25°C ambient temperature. The device is engineered for high-speed switching applications, offering a typical fall time of 20ns at 2A collector current and a low saturation voltage of 200mV at 1A. Its transition frequency reaches up to 250MHz, supporting efficient operation in low-frequency amplification and rapid switching circuits.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 20ns under heavy load conditions
• Low saturation voltage design to minimize power loss during conduction
• Robust discharge power handling for inductive and capacitive loads
• Complementary pairing available with the 2SA2113 PNP transistor

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications
• Driver stages requiring strong discharge power

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL against the official datasheet to confirm the taping packaging format and basic ordering unit quantity. Ensure the component meets standard electronic equipment reliability requirements rather than automotive or medical standards unless explicitly authorized by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when a medium power NPN transistor with fast switching speeds is required. Consider the 30V voltage rating and 2A current capacity relative to the circuit load. Verify thermal management needs as the power dissipation is limited to 500mW without adequate heat sinking.

Single Bipolar Transistors Part Context

This part belongs to ROHM's medium power transistor lineup designed for general-purpose electronic equipment. It utilizes silicon epitaxial planar technology to achieve high reliability and consistent performance characteristics across various operating temperatures.

Single Bipolar Transistors Replacement Considerations

The 2SA2113 is documented as the complementary PNP type. No other direct substitute part numbers are confirmed in the provided documentation.

Single Bipolar Transistors FAQ

What is the typical fall time of the 2SC5916?

The typical fall time is 20ns when measured at a collector current of 2A.

Is this transistor suitable for automotive use?

No, the product is designed for ordinary electronic equipment and is not recommended for automotive devices.

What is the DC current gain range?

The DC current gain (hFE) ranges from 120 to 400 depending on the specific rank classification.