2ST501T

Single Bipolar Transistors Overview

The 2ST501T is a high voltage NPN silicon transistor featuring a monolithic special Darlington configuration. It is housed in a JEDEC TO-220 plastic package and utilizes rugged bipolar technology for high operation junction temperatures. The device provides high DC current gain, with a typical value of 2000 at IC = 2 A and VCE = 2 V. Key electrical ratings include a collector-emitter voltage (VCES) of 500 V and a continuous collector current (IC) of 4 A. Total dissipation reaches 100 W at TC = 25 °C, supported by a thermal resistance junction-to-case of 1.25 °C/W.

Single Bipolar Transistors Feature Summary

• Monolithic special Darlington structure providing high DC current gain
• Rugged bipolar technology designed for high operation junction temperatures
• High voltage capability suitable for demanding switching applications

Single Bipolar Transistors Applications

• Driver for solenoids
• Driver for relays
• Driver for motors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering code matches the required packaging format. The datasheet indicates the standard part number 2ST501T is supplied in tube packaging. Confirm that the component marking on the physical device aligns with the specified identifier to ensure authenticity and correct identification before integration into production systems.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and substantial current drive are required within a single package. The integrated Darlington architecture simplifies driver circuit design by eliminating the need for external biasing components typically associated with discrete transistor pairs. Ensure the application operates within the specified thermal limits to maintain reliability.

Single Bipolar Transistors Part Context

This device belongs to STMicroelectronics' portfolio of high voltage power transistors. It represents a specialized solution combining NPN bipolar technology with a monolithic Darlington configuration. The product line targets industrial applications requiring robust performance under high voltage stress and significant load currents.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other high voltage NPN Darlington transistors from various manufacturers. Verify pinout compatibility and ensure replacement parts meet or exceed the 500 V collector-emitter voltage rating and 4 A continuous current specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCES) is 500 V.

What is the typical DC current gain?

The typical DC current gain (hFE) is 2000, measured at IC = 2 A and VCE = 2 V.

What package type is used?

The device is mounted in a JEDEC TO-220 plastic package.