71V124SA10YG

71V124SA10YG

  • Description:IC SRAM 1MBIT PARALLEL 32SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:07c9050bb901 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 1MBIT PARALLEL 32SOJ
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:1Mbit
  • Memory Organization:128K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:10ns
  • Voltage - Supply:3.15V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package:32-SOJ
  • Access Time:10 ns
  • Grade:-
  • Qualification:-

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71V124SA10YG

Overview

The 71V124SA10YG is a 1Mb (128K x 8) asynchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 10 ns and operates on a single 3.3V power supply ranging from 3.15V to 3.6V. The device utilizes CMOS technology and is housed in a 36-pin Small Outline J-Lead (SOJ) package designed for surface-mount installation. It supports an industrial operating temperature range of -40°C to +85°C and complies with RoHS3 standards.

Feature Summary

  • Asynchronous operation without requiring external clocks or refresh cycles
  • JEDEC center power and ground pinout configuration to reduce noise generation
  • LVTTL-compatible bidirectional inputs and outputs for system integration

Applications

  • Industrial control systems requiring fast data buffering
  • Embedded applications needing high-speed temporary storage
  • Automotive electronics utilizing wide temperature range components

Procurement Notes

Verify component authenticity through authorized distributors as this part may be discontinued. Confirm package integrity and moisture sensitivity level handling procedures before assembly. Cross-reference datasheet revisions to ensure compatibility with existing design specifications. Check for available obsolescence notices or product discontinuation notifications prior to final procurement decisions.

Selection Notes

Select this component when a 1Mb capacity with 10 ns speed is required in a 36-pin SOJ form factor. Ensure the design accommodates the 3.3V logic levels and LVTTL compatibility. Consider the industrial temperature rating if deployed in harsh environments. Verify that the parallel interface requirements match the host controller capabilities.

Part Context

This SRAM belongs to the 71V124 family, which provides standard density solutions for embedded memory needs. The 71V124 series is characterized by its robust CMOS construction and reliable performance in various electronic systems. It serves as a critical component for applications demanding rapid data access and retention without volatile power loss complexities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

71V124SA10YG71V124SA10YG

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