A2T20H330W24SR6

RF FETs, MOSFETs Overview

The A2T20H330W24SR6 is an RF power LDMOS transistor designed for cellular infrastructure applications. It operates within the 1880 to 2025 MHz frequency band and delivers a typical output power of 58 W under average W-CDMA test conditions. The device requires a drain voltage of 28 V, provides a typical gain of 16.5 dB at 1880 MHz, and achieves a typical drain efficiency of 50.9%. It utilizes the NI-1230S-4L2L package.

RF FETs, MOSFETs Feature Summary

• Engineered for high-efficiency performance in wireless base station architectures
• Optimized for linear amplification of wideband communication signals
• Designed for robust operation in demanding thermal environments

RF FETs, MOSFETs Applications

• Wireless infrastructure base stations
• Cellular network coverage expansion
• Broadband signal amplification systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels or certified distributors. Confirm datasheet revision alignment with design requirements. Ensure proper handling protocols are followed due to electrostatic sensitivity. Validate packaging integrity upon receipt to prevent physical damage during installation.

RF FETs, MOSFETs Selection Notes

Evaluate thermal management capabilities to maintain junction temperature within specified limits. Assess impedance matching networks to maximize power transfer efficiency. Consider system linearity requirements to ensure compliance with spectral emission standards. Verify compatibility with existing biasing circuits and control logic.

RF FETs, MOSFETs Part Context

This component belongs to NXP's Airfast RF Power LDMOS portfolio, targeting high-frequency wireless communications. It complements other devices in the series by offering optimized performance for specific cellular bands. The product supports the manufacturer's focus on advanced semiconductor solutions for global connectivity infrastructure.

RF FETs, MOSFETs Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference electrical parameters and pin configurations before implementation.