A2V09H300-04NR3

RF FETs, MOSFETs Overview

The A2V09H300-04NR3 is a 79 W average power asymmetrical Doherty RF LDMOS transistor designed for cellular base station applications in the 720 to 960 MHz range. It operates at 48 Vdc with a drain-source voltage rating of up to 105 Vdc. The device features an OM-780-4L plastic package and includes internal input matching. Typical performance at 940 MHz shows a power gain of 19.7 dB, drain efficiency of 55.9%, and ACPR of -33.4 dBc under single-carrier W-CDMA conditions.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Greater negative gate-source voltage range for improved Class C operation
• Designed for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station applications covering 720 to 960 MHz
• Asymmetrical Doherty amplifier configurations
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 indicates tape and reel packaging containing 250 units on a 32 mm tape width and 13-inch reel. Confirm the component status as archived or end-of-life through official NXP channels before finalizing procurement plans. Ensure compatibility with the specified OM-780-4L plastic package dimensions.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring integrated Doherty functionality within a compact form factor. Evaluate thermal resistance characteristics against system cooling capabilities, noting the junction-to-case value. Verify that the operating voltage and current requirements align with the 48 Vdc supply and quiescent current specifications provided in the electrical data.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from Freescale Semiconductor (now NXP). It utilizes lateral MOSFET technology optimized for high linearity and efficiency in radio frequency power amplification. The device integrates carrier and peaking sections into a single package to simplify assembly and improve performance consistency in base station transmitter designs.

RF FETs, MOSFETs Replacement Considerations

Consult official documentation for direct substitutes. No confirmed public substitute part numbers are available in the source material.

RF FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +105 Vdc.

How is the device packaged?

The device is housed in an OM-780-4L plastic package with an exposed backside source terminal.

What is the typical power gain at 940 MHz?

The typical power gain (Gps) at 940 MHz is 19.7 dB under standard test conditions.