A5G18H610W19NR3

RF FETs, MOSFETs Overview

The A5G18H610W19NR3 is an 85 W asymmetrical Doherty RF power GaN amplifier designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 1805 MHz to 1880 MHz frequency range with a recommended drain voltage of 48 Vdc. The device features high terminal impedances and improved linearized error vector magnitude. It utilizes a plastic OM-780-4S4S package, has a Moisture Sensitivity Level (MSL) rating of 3, and supports peak soldering temperatures of 245 °C.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Advanced high performance in-package Doherty architecture
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions

RF FETs, MOSFETs Applications

• Cellular base station applications
• Wide instantaneous bandwidth infrastructure systems

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R3 confirms the tape and reel configuration containing 250 units on a 44 mm width, 13-inch reel. Confirm the component status as End of Life before finalizing procurement plans. Ensure compliance with RoHS and Halogen Free requirements. Check REACH SVHC declarations for regulatory adherence. Validate that the moisture sensitivity level and thermal limits align with your assembly process capabilities.

RF FETs, MOSFETs Selection Notes

Select this component when designing cellular base stations requiring an 85 W average output power within the 1805 MHz to 1880 MHz band. The internal matching simplifies circuit design compared to discrete transistors. Consider the plastic package thermal characteristics and MSL 3 rating during PCB layout and reflow profiling. Ensure the application can accommodate the required 48 Vdc supply and bias conditions for optimal Doherty performance.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power GaN Amplifier family, specifically engineered for high-efficiency cellular infrastructure. It integrates carrier and peaking sides into a single package to facilitate asymmetrical Doherty configurations. The product data sheet revision history indicates updates to terminology and marking codes, reflecting ongoing documentation refinement for production-grade components.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

RF FETs, MOSFETs FAQ

What is the guaranteed operating frequency range for this amplifier?

Performance is guaranteed for applications operating in the 1805 MHz to 1880 MHz band.

How is the exposed backside of the package connected?

The exposed backside of the package serves as the source terminal for the amplifier.

What is the Moisture Sensitivity Level (MSL) rating?

The device has a Moisture Sensitivity Level (MSL) rating of 3.