A5G37H110NT4

RF FETs, MOSFETs Overview

The NXP A5G37H110NT4 is an Airfast RF Power GaN amplifier designed for cellular base station applications requiring wide instantaneous bandwidth in the 3600 to 3800 MHz range. It delivers 13.5 W average output power with a saturated power of 89.1 W. The device operates at a recommended drain voltage of 48 Vdc and features high terminal impedances for optimal broadband performance. It supports low complexity linearization systems and withstands extremely high output VSWR.

RF FETs, MOSFETs Feature Summary

• Optimized for massive MIMO active antenna systems in 5G base stations
• Capable of withstanding extremely high output VSWR and broadband operating conditions
• Designed for low complexity linearization systems
• Improved linearized error vector magnitude with next generation signals

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems
• 5G infrastructure equipment

RF FETs, MOSFETs Procurement Notes

Verify the specific T4 suffix indicates a tape and reel quantity of 2,500 units on a 13-inch reel with 16 mm width. Confirm the package type is DFN 7 x 6.5. Ensure the application frequency strictly falls within the characterized 3600 to 3800 MHz band, as performance guarantees do not extend outside this range.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring asymmetrical Doherty configurations in the 3600-3800 MHz spectrum. Consider the thermal resistance values for heat sinking requirements. Verify compatibility with 48 Vdc supply rails and ensure biasing sequences align with depletion mode GaN operation protocols.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast series of Gallium Nitride (GaN) amplifiers. It is specifically engineered for high-power RF applications in telecommunications infrastructure. The device utilizes a Doherty architecture to enhance efficiency and linearity for complex modulation schemes used in modern wireless networks.

RF FETs, MOSFETs Replacement Considerations

The datasheet does not list official substitute part numbers. Designers should evaluate other NXP Airfast models or third-party GaN amplifiers based on matching frequency ranges, power output levels, and package dimensions if replacement is necessary.

RF FETs, MOSFETs FAQ

What is the guaranteed operating frequency range for the A5G37H110NT4?

Performance is guaranteed for applications operating in the 3600 to 3800 MHz band.

What is the maximum channel temperature rating?

The maximum channel temperature (TCH) is rated at 225 °C.

How is the device packaged?

The device is housed in a DFN 7 x 6.5 package.