AFT09MS031NR1

RF FETs, MOSFETs Overview

The AFT09MS031NR1 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for mobile two-way radio applications operating between 764 and 941 MHz. It features broadband performance with full power output across the 764–870 MHz range. The device utilizes a TO-270-2 plastic package capable of withstanding junction temperatures up to 225°C. Key electrical characteristics include a drain-source voltage rating of 40 Vdc, an operating voltage of 17 Vdc maximum, and a total device dissipation of 317 W/°C derating above 25°C case temperature.

RF FETs, MOSFETs Feature Summary

• Integrated ESD protection and stability enhancements
• High linearity suitable for TETRA, SSB, and LTE modulation schemes
• Wideband capability delivering full power across the 764–870 MHz frequency band
• Exceptional thermal performance within a cost-effective over-molded plastic package

RF FETs, MOSFETs Applications

• Output stage for 800 MHz trunking band mobile radio
• Output stage for 900 MHz trunking band mobile radio
• Large-signal common source amplifier applications in mobile radio equipment

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm moisture sensitivity level (MSL 3) and peak reflow temperature limits during assembly. Ensure proper handling protocols are followed to prevent electrostatic discharge damage despite integrated protection features.

RF FETs, MOSFETs Selection Notes

Select this transistor for designs requiring robust load mismatch tolerance and high reliability in mobile communication systems. Evaluate thermal management requirements carefully given the high power dissipation capabilities and specific junction temperature limits defined in the datasheet specifications.

RF FETs, MOSFETs Part Context

This component belongs to the Airfast Wideband RF Power LDMOS Transistor family from NXP Semiconductors. It represents a silicon-based solution optimized for demanding RF power markets including UHF and VHF broadcast sectors. The device succeeds earlier vertical MOSFET technologies by offering superior ruggedness and intrinsic reliability metrics.

RF FETs, MOSFETs Replacement Considerations

AFT09MS031GNR1 serves as a verified substitute part number featuring gull-wing leads instead of the standard configuration.