RF FETs, MOSFETs AFT09S200W02SR3 product image

AFT09S200W02SR3

  • Description:RF MOSFET LDMOS 4W PLD
  • Series:-

SKU:51889a5185d7 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AFT09S200W02SR3 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 4W PLD. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT09S200W02SR3

  • Description:RF MOSFET LDMOS 4W PLD
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for AFT09S200W02SR3

AFT09S200W02SR3

RF FETs, MOSFETs Overview

The AFT09S200W02SR3 is an Airfast RF Power LDMOS Transistor manufactured by NXP Semiconductors. It operates within the 716-960 MHz frequency range and delivers 41 W of average power at a 28 V supply voltage. The device utilizes Silicon technology and is housed in a Reel package. It is classified as an RF MOSFET transistor with moisture sensitivity. The component has reached its end-of-life status.

RF FETs, MOSFETs Feature Summary

  • Airfast RF Power LDMOS construction for high-frequency performance
  • Designed for operation in the 716-960 MHz band
  • Capable of delivering 41 W average output power

RF FETs, MOSFETs Applications

  • RF power amplification in communication systems
  • Broadcast transmitter stages
  • Industrial, Scientific, and Medical (ISM) equipment

RF FETs, MOSFETs Procurement Notes

This component is officially discontinued and no longer in production. Availability is restricted to remaining stock or secondary market sources. Verify authenticity and condition carefully when sourcing from non-OEM channels. Ensure compatibility with existing designs before procurement due to the end-of-life status.

RF FETs, MOSFETs Selection Notes

Engineers should evaluate this part specifically for applications requiring 41 W average power in the 716-960 MHz range. Since the device is obsolete, consider redesigning with current NXP Airfast alternatives that offer similar electrical characteristics and thermal performance. Check datasheets for updated pinouts and mounting requirements.

RF FETs, MOSFETs Part Context

The AFT09S200W02SR3 belongs to NXP's Airfast family of RF power transistors. These devices are engineered for robust performance in demanding radio frequency environments. The specific model integrates LDMOS technology to provide high gain and efficiency, making it suitable for linear amplification tasks in professional RF infrastructure.

RF FETs, MOSFETs Replacement Considerations

Consult NXP documentation for direct replacements or pin-compatible upgrades. Current Airfast series models may serve as functional substitutes. Verify that any replacement matches the original frequency range and power handling capabilities.

AFT09S200W02SR3AFT09S200W02SR3

Click on the inquiry

Recent News