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AFT09S200W02SR3 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 4W PLD. Review the specifications below when checking this part for your BOM.
The AFT09S200W02SR3 is an Airfast RF Power LDMOS Transistor manufactured by NXP Semiconductors. It operates within the 716-960 MHz frequency range and delivers 41 W of average power at a 28 V supply voltage. The device utilizes Silicon technology and is housed in a Reel package. It is classified as an RF MOSFET transistor with moisture sensitivity. The component has reached its end-of-life status.
This component is officially discontinued and no longer in production. Availability is restricted to remaining stock or secondary market sources. Verify authenticity and condition carefully when sourcing from non-OEM channels. Ensure compatibility with existing designs before procurement due to the end-of-life status.
Engineers should evaluate this part specifically for applications requiring 41 W average power in the 716-960 MHz range. Since the device is obsolete, consider redesigning with current NXP Airfast alternatives that offer similar electrical characteristics and thermal performance. Check datasheets for updated pinouts and mounting requirements.
The AFT09S200W02SR3 belongs to NXP's Airfast family of RF power transistors. These devices are engineered for robust performance in demanding radio frequency environments. The specific model integrates LDMOS technology to provide high gain and efficiency, making it suitable for linear amplification tasks in professional RF infrastructure.
Consult NXP documentation for direct replacements or pin-compatible upgrades. Current Airfast series models may serve as functional substitutes. Verify that any replacement matches the original frequency range and power handling capabilities.
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