RF FETs, MOSFETs AFT21S230-12SR3 product image

AFT21S230-12SR3

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:81b1236edec9 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AFT21S230-12SR3 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V NI780. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT21S230-12SR3

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz
  • Gain:16.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.5 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-780S
  • Supplier Device Package:NI-780S
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for AFT21S230-12SR3

AFT21S230-12SR3

RF FETs, MOSFETs Overview

The AFT21S230-12SR3 is an RF LDMOS transistor manufactured by NXP USA Inc. It operates at a frequency of 2.4 GHz with a rated voltage of 28 V and a maximum drain-source voltage of 65 V. The device delivers 45 W of output power, providing a gain of 17.9 dB under test conditions of 1.1 A current. It utilizes the NI-780GS-2L surface mount package.

RF FETs, MOSFETs Feature Summary

  • High-power RF performance utilizing LDMOS technology for efficient signal amplification
  • Designed for operation in the 2.4 GHz industrial, scientific, and medical (ISM) band
  • Integrated nickel barrier construction to enhance solderability and thermal reliability

RF FETs, MOSFETs Applications

  • Wireless local area network (WLAN) infrastructure equipment
  • Industrial, Scientific, and Medical (ISM) band transmitters
  • Point-to-point microwave communication systems

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence or lifecycle changes. Confirm the specific suffix 'SR3' corresponds to the required tape and reel packaging configuration. Ensure compatibility with existing NI-780GS-2L footprints during procurement planning.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring high linearity and power density in the 2.4 GHz spectrum. Evaluate thermal management requirements due to the 45 W output capability within the compact NI-780GS-2L package. Compare against alternative LDMOS devices based on gain consistency and breakdown voltage margins for robust system design.

RF FETs, MOSFETs Part Context

This device belongs to the AFT21 series of RF power transistors from NXP. The series is engineered for broadband RF applications, offering a balance of high efficiency and linear performance. The NI-780GS-2L package is standard for these high-power discrete RF components, facilitating automated assembly in manufacturing environments.

RF FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult NXP technical support for direct replacements or cross-reference options if this specific variant is unavailable.

AFT21S230-12SR3AFT21S230-12SR3

Click on the inquiry

Recent News