AFT26H050W26SR3

RF FETs, MOSFETs Overview

The AFT26H050W26SR3 is an RF power LDMOS transistor manufactured by NXP Semiconductors, formerly part of the Freescale Semiconductor portfolio. This component belongs to the Airfast series and is designed for high-performance radio frequency applications. It operates within a frequency range of 2.49 GHz to 2.69 GHz. The device utilizes silicon technology and is housed in a surface-mount package suitable for automated assembly processes. As an enhancement mode device, it serves as a critical active element in RF signal amplification stages.

RF FETs, MOSFETs Feature Summary

• Airfast RF Power LDMOS Transistor
• Silicon Technology
• Surface Mount Package

RF FETs, MOSFETs Applications

• Base station transmitters
• Broadband amplifiers
• Wireless infrastructure equipment

RF FETs, MOSFETs Procurement Notes

Verify the current lifecycle status before integration, as this component may be discontinued or subject to limited availability. Confirm moisture sensitivity levels and required baking procedures if the seal has been compromised. Ensure that the ordering suffix corresponds exactly to the required packaging format, such as reel or cut tape specifications, to match production line requirements.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring operation in the 2.49 to 2.69 GHz band. Evaluate thermal management capabilities based on the specific package type and expected power dissipation. Compare electrical characteristics against system requirements for gain, linearity, and efficiency. Ensure compatibility with existing bias networks and impedance matching circuits used in the target application architecture.

RF FETs, MOSFETs Part Context

This part is associated with the Freescale Semiconductor brand, which was acquired by NXP Semiconductors. The product falls under the Airfast family of RF power transistors. These devices are engineered for robust performance in demanding wireless communication environments. The transition from Freescale to NXP does not alter the technical specifications documented in original datasheets.

RF FETs, MOSFETs Replacement Considerations

Check for official cross-reference data provided by NXP Semiconductors. Verify pinout compatibility and thermal pad configurations when considering alternative packages. Electrical parameters must be compared directly to ensure equivalent performance in the specific frequency band.