RF FETs, MOSFETs AFT26H200W03SR6 product image

AFT26H200W03SR6

  • Description:RF MOSFET LDMOS 28V NI1230
  • Series:-

SKU:9c4ee8643015 Category: Brand:

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AFT26H200W03SR6 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V NI1230. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT26H200W03SR6

  • Description:RF MOSFET LDMOS 28V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.5GHz
  • Gain:14.1dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230-4S
  • Supplier Device Package:NI-1230-4S
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for AFT26H200W03SR6

AFT26H200W03SR6

RF FETs, MOSFETs Overview

The AFT26H200W03SR6 is an Airfast RF Power LDMOS transistor manufactured by NXP Semiconductors. It operates within the frequency range of 2500 to 2700 MHz and delivers a continuous wave output power of 200 watts at a drain voltage of 28 volts. The device utilizes a surface-mount package configuration designed for high-power radio frequency applications.

RF FETs, MOSFETs Feature Summary

  • High power density design optimized for broadband RF amplification
  • Robust lateral DMOS technology ensuring reliable operation under demanding signal conditions
  • Engineered for efficient thermal management in compact module architectures

RF FETs, MOSFETs Applications

  • Base station power amplification
  • Broadband RF transmitter modules
  • Wireless communication infrastructure

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix SR6 against official NXP documentation to confirm tape and reel packaging specifications. Confirm current manufacturing status as Airfast products may undergo lifecycle changes. Ensure compatibility with existing board layouts and thermal designs before procurement.

RF FETs, MOSFETs Selection Notes

Select this component for applications requiring high linearity and efficiency in the 2.5 to 2.7 GHz band. Evaluate thermal resistance requirements and biasing networks suitable for 28-volt operation. Compare performance metrics against alternative LDMOS devices if broader bandwidth or different power levels are needed.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast series of RF power transistors, which are widely used in telecommunications infrastructure. The series emphasizes high reliability and consistent performance across varying environmental conditions. It complements other NXP RF solutions for complete system integration.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent power levels and frequency ranges. Verify pinout compatibility and thermal characteristics when considering alternatives from the same or competing manufacturers.

AFT26H200W03SR6AFT26H200W03SR6

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