RF FETs, MOSFETs AFT27S006NT1 product image

AFT27S006NT1

$10.38
  • Description:RF MOSFET LDMOS 28V PLD-1.5W
  • Series:-

SKU:07297efc5936 Category: Brand:

  
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AFT27S006NT1 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V PLD-1.5W. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFT27S006NT1

  • Description:RF MOSFET LDMOS 28V PLD-1.5W
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.17GHz
  • Gain:22dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:70 mA
  • Power - Output:28.8dBm
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:PLD-1.5W
  • Supplier Device Package:PLD-1.5W
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for AFT27S006NT1

AFT27S006NT1

RF FETs, MOSFETs Overview

The AFT27S006NT1 is a 28.8 dBm average power RF LDMOS transistor operating from 728 to 3700 MHz at 28 Vdc. It features a PLD-1.5W plastic package and supports single-carrier W-CDMA with input signal PAR of 9.9 dB @ 0.01% probability on CCDF. Drain efficiency ranges from 14.3% to 22.4% across the band, while power gain varies between 16.0 dB and 24.4 dB. Adjacent channel power ratio performance typically falls between -40.8 dBc and -46.2 dBc.

RF FETs, MOSFETs Feature Summary

  • Designed for digital predistortion error correction systems
  • Greater negative gate-source voltage range for improved Class C operation
  • Universal broadband driver capability

RF FETs, MOSFETs Applications

  • Cellular base station applications
  • Digital predistortion linearization circuits
  • Broadband RF power amplification

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T1 indicates tape and reel packaging containing 1000 units on a 16 mm tape width with a 7-inch reel. Confirm the device status as End of Life before initiating new designs. Ensure compatibility with the PLD-1.5W plastic package dimensions and thermal requirements specified in the datasheet.

RF FETs, MOSFETs Selection Notes

Select this component for wideband cellular infrastructure requiring consistent performance from 728 MHz to 3700 MHz. The device accommodates high peak-to-average ratios suitable for modern modulation schemes. Verify that the system can provide the required 28 Vdc supply and manage the thermal resistance of 3.4 °C/W junction-to-case effectively.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast RF Power LDMOS Transistor family. It utilizes N-channel enhancement-mode lateral MOSFET technology optimized for high linearity and efficiency in wireless communication networks. The PLD-1.5W package provides a compact solution for integrating into dense base station architectures.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

AFT27S006NT1AFT27S006NT1
$10.38
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