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AFT27S006NT1 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 28V PLD-1.5W. Review the specifications below when checking this part for your BOM.
The AFT27S006NT1 is a 28.8 dBm average power RF LDMOS transistor operating from 728 to 3700 MHz at 28 Vdc. It features a PLD-1.5W plastic package and supports single-carrier W-CDMA with input signal PAR of 9.9 dB @ 0.01% probability on CCDF. Drain efficiency ranges from 14.3% to 22.4% across the band, while power gain varies between 16.0 dB and 24.4 dB. Adjacent channel power ratio performance typically falls between -40.8 dBc and -46.2 dBc.
Verify the specific ordering suffix T1 indicates tape and reel packaging containing 1000 units on a 16 mm tape width with a 7-inch reel. Confirm the device status as End of Life before initiating new designs. Ensure compatibility with the PLD-1.5W plastic package dimensions and thermal requirements specified in the datasheet.
Select this component for wideband cellular infrastructure requiring consistent performance from 728 MHz to 3700 MHz. The device accommodates high peak-to-average ratios suitable for modern modulation schemes. Verify that the system can provide the required 28 Vdc supply and manage the thermal resistance of 3.4 °C/W junction-to-case effectively.
This part belongs to NXP's Airfast RF Power LDMOS Transistor family. It utilizes N-channel enhancement-mode lateral MOSFET technology optimized for high linearity and efficiency in wireless communication networks. The PLD-1.5W package provides a compact solution for integrating into dense base station architectures.
Public confirmed substitute part numbers are not available in the provided documentation.
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