AIKW50N65RF5XKSA1

Single IGBTs Overview

The AIKW50N65RF5 is a CoolSiC hybrid discrete component for automotive applications, integrating a Trenchstop 5 fast-switching IGBT and a CoolSiC Schottky Diode G5. It features a PG-TO247-3 package with Pin 1 as gate, Pins 2 & backside as collector, and Pin 3 as emitter. Key parameters include a collector-emitter voltage of 650 V, continuous collector current of 80 A at 25°C, and saturation voltage of 1.6 V at 25°C. The maximum junction temperature is 175°C, with power dissipation rated at 250 W at 25°C case temperature.

Single IGBTs Feature Summary

• Combines Trenchstop 5 fast-switching IGBT technology with CoolSiC Schottky Diode G5 for optimized performance.
• Qualified according to AEC-Q101/100 standards for automotive reliability.
• Provides best-in-class efficiency in hard switching and resonant topologies.
• Features low gate charge (QG) and lead-free plating compliant with RoHS.

Single IGBTs Applications

• On-board charger
• DC/DC converter

Single IGBTs Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the component meets the required automotive qualification standards for the intended application environment. Cross-reference datasheet revision history for any updates to electrical characteristics or thermal resistance values before finalizing procurement specifications.

Single IGBTs Selection Notes

Select this hybrid discrete for designs requiring high efficiency in both hard switching and resonant topologies. Consider the 175°C maximum junction temperature capability for thermal management optimization. Evaluate the integrated CoolSiC diode's impact on reverse recovery characteristics compared to standard silicon alternatives. Verify that the PG-TO247-3 package dimensions fit the target PCB layout constraints.

Single IGBTs Part Context

This component belongs to Infineon's CoolSiC hybrid discrete family designed specifically for automotive markets. It merges silicon IGBT technology with silicon carbide diode technology to enhance system performance. The integration aims to reduce switching losses and improve overall energy conversion efficiency in demanding vehicular power electronics applications.

Single IGBTs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

Single IGBTs FAQ

What is the pin configuration for the AIKW50N65RF5?

Pin 1 is the gate, Pins 2 and the backside serve as the collector, and Pin 3 is the emitter.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Is this component qualified for automotive use?

Yes, it is qualified according to AEC-Q101/100 standards.