ALD114804APCL

FET, MOSFET Arrays Overview

The ALD114804APCL is a quad N-channel depletion mode MOSFET array manufactured by Advanced Linear Devices Inc. in a 16-pin Plastic DIP package. It utilizes EPAD® CMOS technology for factory-matched precision characteristics. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) of -0.40V, Drain-Source Breakdown Voltage (BVDSX) of 10V, and Drain-Source On Resistance (RDS(ON)) of 500 Ohms at VGS=+3.6V. The device supports an operating temperature range of 0°C to +70°C with a maximum power dissipation of 500 mW.

FET, MOSFET Arrays Feature Summary

• Monolithic quad N-channel depletion mode MOSFETs matched at the factory using EPAD® CMOS technology.
• Designed as functional replacements for normally-closed relays, conducting without applied power.
• Exhibits excellent temperature tracking due to devices being on the same monolithic chip.
• Capable of operating in resistance mode at low drain voltages and current source mode at higher levels.

FET, MOSFET Arrays Applications

• Functional replacement of Form B (normally closed) relays
• Ultra low power analog and digital circuits
• Current mirrors and current sources requiring high beta
• Transmission gates and multiplexer applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Ensure the component meets the required industrial temperature range specifications if operating outside the standard commercial limits. Cross-reference the datasheet version to confirm all electrical parameters align with design requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low voltage small signal processing with precise matching between multiple channels. Consider the -0.40V threshold voltage for sub-threshold operation needs. Verify that the 16-pin PDIP package fits the board layout constraints and that the 500mW power dissipation rating accommodates the thermal environment.

FET, MOSFET Arrays Part Context

This part belongs to the ALD1148xx/ALD1149xx family of depletion mode EPAD MOSFETs. It shares architectural similarities with the ALD114804PCL but differs in package configuration. The 'A' suffix typically denotes specific manufacturing revisions or enhanced matching characteristics within the EPAD product line compared to non-A variants.

FET, MOSFET Arrays Replacement Considerations

The ALD114804PCL serves as a direct alternative with identical electrical specifications but utilizes a SOIC-16 package instead of the PDIP-16. Designers must account for the physical footprint differences when substituting these parts in existing PCB layouts.

FET, MOSFET Arrays FAQ

What is the typical offset voltage for the ALD114804APCL?

The typical offset voltage (VOS) is 25mV at IDS = 1µA, with a maximum specified value of 2mV under certain test conditions.

How does the device behave when the gate is grounded?

When the gate is grounded, the MOSFET operates in resistance mode for low drain voltage levels and in current source mode for higher voltage levels, providing a constant drain current.

What is the input capacitance of the ALD114804APCL?

The input capacitance (CISS) is typically 2.5 pF.