APT18M80B

$5.61

Description：MOSFET N-CH 800V 19A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:bb9d7da0b1c3 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT18M80B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 19A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT18M80B

Description：MOSFET N-CH 800V 19A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3760 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT18M80B

APT18M80B

Single FETs, MOSFETs Overview

The APT18M80B is an N-channel MOSFET from Microchip Technology utilizing MOS 8® technology. It features a maximum drain-source voltage of 800V and a typical on-state resistance of 530 milliohms. The device supports a continuous drain current of 12A to 19A depending on thermal conditions, with a pulsed drain current capability of 70A. Power dissipation reaches 500W in a TO-247-3 package. Gate-source voltage limits are specified at ±30V.

Single FETs, MOSFETs Feature Summary

High-voltage switching capability with 800V drain-source rating
Optimized for fast switching speeds and amplifying applications
Through-hole mounting via TO-247-3 case style

Single FETs, MOSFETs Applications

High-voltage power switching circuits
Fast switching speed amplifier designs
Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer datasheet for the APT18M80B to confirm exact electrical tolerances and thermal characteristics. Ensure the component matches the required TO-247-3 package dimensions and pinout configuration for your PCB layout. Cross-reference official Microchip documentation for any updates regarding RoHS compliance or material declarations before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high blocking voltage up to 800V combined with moderate continuous current handling. The TO-247-3 package facilitates effective heat dissipation for power levels up to 500W under controlled thermal conditions. Evaluate the 530 milliohm on-resistance against your conduction loss requirements and ensure the gate drive voltage remains within the ±30V limit for reliable operation.

Single FETs, MOSFETs Part Context

This part belongs to the MOS 8® family of unipolar MOSFETs designed by Microchip Technology. The series emphasizes performance in high-voltage environments where fast switching transitions are critical. The APT18M80B represents a through-hole solution suitable for applications demanding robust packaging and high power density compared to surface-mount alternatives.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified equivalent parts. Ensure any replacement maintains the 800V Vds rating and compatible TO-247-3 footprint. Verify that alternative devices meet or exceed the 530 milliohm Rds(on) specification and 70A pulsed current capability without altering thermal management requirements.