APT22F80S

Single FETs, MOSFETs Overview

The APT22F80S is a single N-channel Power MOSFET from Microchip Technology, utilizing Silicon technology and the Power MOS 8 architecture. It is housed in a D3PAK-3 surface-mount package with a tube factory packaging quantity of 1. Key electrical parameters include a drain-source breakdown voltage (Vds) of 800 V and a continuous drain current (Id) of 22 A. The device features a maximum on-resistance (Rds On) of 450 mOhms at a gate-source voltage of 10 V. Gate threshold voltage (Vgs th) ranges from 2.5 V to 4 V, with a total gate charge (Qg) of 60 nC. The component supports a maximum power dissipation (Pd) of 500 W and operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Incorporates Power MOS 8 technology for optimized switching performance and low conduction losses.
• Designed as a fast-recovery epitaxial diode (FREDFET) structure for efficient high-voltage switching applications.
• Utilizes a D3PAK-3 surface-mount package to facilitate automated assembly and thermal management.

Single FETs, MOSFETs Applications

• High-frequency AC/DC and DC/DC power conversion circuits
• Motor control systems requiring high-voltage switching
• Industrial power supplies and inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm pinout and thermal characteristics. Ensure the ordering part number matches the required package variant. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring an 800 V rating with moderate current handling capabilities. The D3PAK-3 package offers a balance between thermal performance and PCB space efficiency. Evaluate the 450 mOhm on-resistance against system efficiency targets and ensure adequate heatsinking for the 500 W dissipation rating under worst-case operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of discrete power MOSFETs manufactured by Microchip Technology. The series utilizes advanced silicon planar technology to deliver robust performance in high-voltage environments. These components are engineered for reliability in demanding industrial and commercial power electronics applications.

Single FETs, MOSFETs Replacement Considerations

Consult Microchip's competitor cross-reference tool for verified equivalent parts. Ensure any substitute maintains matching voltage, current, and package specifications. Verify that alternative devices offer comparable switching speeds and thermal resistance values.