APT30M85BVFRG

$7.24

Description：MOSFET N-CH 300V 40A TO247
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:67fa2dcc14f4 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT30M85BVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 300V 40A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT30M85BVFRG

Description：MOSFET N-CH 300V 40A TO247
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：85mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT30M85BVFRG

APT30M85BVFRG

Single FETs, MOSFETs Overview

APT30M85BVFRG is a silicon N-channel FREDFET from the Power MOS 8 family, rated at 200V and packaged in TO-247. It features an on-resistance of 0.085 ohms and a maximum continuous drain current of 40A. The device incorporates a fast recovery body diode for high dv/dt ruggedness and ZVS circuit reliability.

Single FETs, MOSFETs Feature Summary

Fast switching with low EMI characteristics
Fast recovery intrinsic body diode
Quiet switching operation
Avalanche-energy rated

Single FETs, MOSFETs Applications

Power factor correction
Server and telecom power systems
Solar inverters
Induction heating

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Microchip channels. Confirm RoHS compliance status via official documentation. Check datasheet revisions for updated electrical parameters before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this part for applications requiring fast switching speeds and low gate charge. The integrated fast recovery body diode supports zero-voltage switching topologies. Ensure thermal management aligns with the TO-247 package capabilities.

Single FETs, MOSFETs Part Context

This component belongs to the Power MOS 8 series, designed for high-frequency, high-voltage applications above 500W. It utilizes proprietary self-aligned aluminum metal gate technology to minimize JFET effects and reduce on-resistance compared to previous generations.