Single FETs, MOSFETs APT30N60BC6 product image

APT30N60BC6

$3.89
  • Description:MOSFET N-CH 600V 30A TO247
  • Series:CoolMOS™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:3b5c2f87176f Category: Brand:

  
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APT30N60BC6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 30A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT30N60BC6

  • Description:MOSFET N-CH 600V 30A TO247
  • Series:CoolMOS™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:125mOhm @ 14.5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2267 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):219W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT30N60BC6

APT30N60BC6

Single FETs, MOSFETs Overview

The APT30N60BC6 is a single N-channel power MOSFET manufactured by Microchip Technology. It features a 600 V drain-source breakdown voltage and a continuous drain current of 30 A at case temperature. The device utilizes a TO-247 through-hole package with a maximum power dissipation of 219 W at case temperature. Key electrical parameters include a gate-source voltage range of -20 V to +20 V, a typical on-resistance of 125 milliohms, and a threshold voltage of 2.1 V. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration for high-voltage switching applications
  • Fieldstop technology implementation for optimized performance
  • Through-hole mounting capability in a robust TO-247 package

Single FETs, MOSFETs Applications

  • High-frequency power conversion circuits
  • Motor control systems requiring reliable switching
  • Industrial power supply designs

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the TO-247 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 219 W power dissipation limit under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rating and 30 A continuous current capacity are required in a through-hole format. Compare the 125 milliohm on-resistance against system efficiency targets. Consider the 2.1 V threshold voltage for gate drive compatibility. Evaluate the TO-247 package suitability against available board space and thermal constraints compared to surface-mount alternatives.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's discrete power MOSFET portfolio, specifically designed for general-purpose switching applications. It represents a standard offering in the company's high-voltage silicon transistor lineup, providing a balance of voltage handling and current carrying capability for industrial and commercial electronics.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes within the same voltage and current class from Microchip or other manufacturers. Verify that any replacement maintains the 600 V rating and comparable on-resistance characteristics.

APT30N60BC6APT30N60BC6
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