APT5018BLLG

Single FETs, MOSFETs Overview

The APT5018BLLG is a Power MOS 7 N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It features a TO-247 package with a drain-source breakdown voltage of 500V and a continuous drain current of 27A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.18 ohms at VGS = 10V and ID = 13.5A. Total gate charge is typically 58nC, and input capacitance is 2596pF. Operating junction temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Power MOS 7 technology combines low conduction losses with fast switching speeds via a patented metal gate structure.
• Optimized for lower Miller capacitance and reduced gate charge to facilitate easier driving.
• Provides increased total power dissipation capabilities within the TO-247 package.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Motor control applications
• Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'BLL' corresponds to the TO-247 through-hole package variant when sourcing replacements. Confirm that the manufacturer designation remains consistent with Microchip Technology or Advanced Power Technology legacy documentation. Ensure component authenticity matches the original datasheet specifications provided.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 500V with moderate current ratings around 27A. The low on-resistance minimizes conduction losses in power stages. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance for the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the APT5018 series of Power MOS 7 devices. It shares core electrical characteristics with the APT5018SLLG, differing primarily in the physical package configuration. The series represents a generation of low-loss, high-voltage N-Channel enhancement mode power MOSFETs designed for improved efficiency.

Single FETs, MOSFETs Replacement Considerations

APT5018SLLG serves as a direct functional substitute offering identical electrical performance in a surface-mount D3PAK package.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device supports a repetitive avalanche energy of 30mJ under specified test conditions.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage decreases as the junction temperature increases, as illustrated in the normalized threshold voltage versus temperature curves.