APT5F100K

Description：MOSFET N-CH 1000V 5A TO220
Series：POWER MOS 8™
Mfr：Microsemi Corporation
Package：Tube

SKU:ecd02d08187d Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT5F100K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1000V 5A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5F100K

Description：MOSFET N-CH 1000V 5A TO220
Series：POWER MOS 8™
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.8Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1409 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220 [K]
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for APT5F100K

APT5F100K

Single FETs, MOSFETs Overview

The APT5F100K is a 1000V, 5A N-channel FREDFET in a TO-220 package. It features a maximum drain-source on-resistance of 2.8Ω at VGS=10V and ID=3A. The device supports a continuous drain current of 5A at TC=25°C and a pulsed drain current of 20A. Key dynamic characteristics include a reverse recovery time (trr) of ≤155ns and a peak recovery dv/dt of 43V/ns. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Optimized body diode for high reliability with reduced trr and soft recovery
Ultra low Crss for improved noise immunity
Poly-silicon gate structure controls di/dt for low EMI
Rated for avalanche energy applications

Single FETs, MOSFETs Applications

ZVS phase shifted and other full bridge converters
Half bridge circuits
PFC and boost converters
Buck converters
Flyback converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances and packaging variations. Ensure the component meets RoHS compliance requirements if applicable to your design specifications. Cross-reference the datasheet revision date to confirm the validity of the thermal and switching parameters provided.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switch-mode power applications requiring fast switching and low EMI. Consider the 2.8Ω maximum RDS(on) for conduction loss calculations at 3A. Evaluate the thermal impedance characteristics for heatsinking requirements in TO-220 packages. Verify compatibility with ZVS topologies due to the optimized body diode recovery characteristics.

Single FETs, MOSFETs Part Context

This part belongs to Microsemi's POWER MOS 8 family of high-speed, high-voltage N-channel switch-mode power MOSFETs. The FREDFET variant specifically targets applications where body diode performance is critical, such as synchronous rectification or hard-switched topologies requiring robust reverse recovery behavior.