APT66M60B2

Single FETs, MOSFETs Overview

The APT66M60B2 is a through-hole N-channel MOSFET from Microchip Technology, utilizing T-MAX™ [B2] packaging. It features a 600 V drain-source voltage rating and supports a continuous drain current of 70A at case temperature. The device dissipates up to 1135W under thermal constraints. Key electrical characteristics include a maximum on-resistance of 100 milliohms at 33A and 10V gate drive, with a gate charge of 330 nC at 10V. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High power dissipation capability for robust thermal management
• Low on-resistance optimized for efficient conduction
• T-MAX™ package design for reliable through-hole mounting

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply inverters
• High-current switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix B2 against official Microchip documentation to confirm pinout and thermal pad configuration. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the TO-247-3 footprint dimensions with your PCB layout specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking and significant current handling are required in a through-hole form factor. Consider the 100 milliohm resistance limit for conduction loss calculations. Evaluate the 1135W thermal dissipation rating against your heatsinking strategy to ensure safe operation within the specified temperature limits.

Single FETs, MOSFETs Part Context

This device belongs to the APT66M60 series of power MOSFETs manufactured by Microchip Technology. It represents a standard discrete semiconductor solution designed for general-purpose high-power applications. The T-MAX™ branding indicates a specific package variant focused on thermal performance and mechanical stability for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent N-channel 600V MOSFETs with comparable current ratings. Verify that any alternative device meets or exceeds the 100 milliohm on-resistance and 70A continuous current requirements.