APT8024B2LLG

Single FETs, MOSFETs Overview

The APT8024B2LLG is a Power MOSFET manufactured by Microsemi (Microsemi). It is an N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor housed in a T-MAX-3 through-hole package. The device features a drain-source breakdown voltage of 800 V and a maximum continuous drain current of 31 A. Its maximum on-resistance is specified at 0.24 ohms, with a peak pulsed drain current capability of 124 A.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode silicon construction
• Integrated avalanche energy rating for robustness
• Single element configuration with built-in diode

Single FETs, MOSFETs Applications

• Power switching circuits
• Industrial power management systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation carefully, as sources indicate both Microchip/Microsemi and ADPOW branding for this part number. Confirm the specific datasheet version to ensure alignment with the required electrical characteristics and package dimensions before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling up to 800 V with moderate current capacity. The T-MAX-3 through-hole package is suitable for designs prioritizing mechanical stability and thermal dissipation via direct mounting.

Single FETs, MOSFETs Part Context

This component belongs to the Power MOSFET category within Microsemi's discrete semiconductor portfolio. It serves as a high-power switching element designed for industrial environments where reliability under high voltage stress is critical.