APT8056BVRG

Single FETs, MOSFETs Overview

The APT8056BVRG is a single N-channel silicon MOSFET manufactured by Microchip Technology. It features an 800 V drain-source breakdown voltage and a continuous drain current of 13 A to 16 A depending on thermal conditions. The device exhibits a maximum on-resistance of 560 mΩ at Vgs = 10 V. It operates within a temperature range of -55°C to +150°C junction temperature. Power dissipation is rated at 280 W or 370 W based on specific test conditions. The component utilizes a TO-247-3 through-hole package with a gate-source voltage limit of ±30 V and a typical gate charge of 225 nC.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 800 V breakdown rating for robust switching applications
• Low on-resistance design to minimize conduction losses in power circuits
• Enhanced thermal stability supporting operation up to 150°C junction temperature

Single FETs, MOSFETs Applications

• Industrial motor control systems
• High-voltage power supply inverters
• Solid-state relay switching modules

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision when ordering, as electrical parameters such as continuous drain current and power dissipation ratings may vary between different manufacturer documentation versions. Confirm the package type matches the target PCB footprint requirements. Ensure that the sourcing channel provides authentic components from authorized distribution networks to guarantee reliability and performance consistency in critical power electronics designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring moderate current handling capabilities. The TO-247-3 package facilitates effective heat dissipation for through-hole mounting strategies. Consider the 560 mΩ on-resistance value when calculating total system efficiency and thermal management requirements. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channel without exceeding the 30 V gate-source limit.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of high-voltage MOSFETs produced by Microchip Technology. The series is designed for general-purpose power switching applications. The APT8056BVRG specifically denotes the 800 V variant with optimized on-resistance characteristics. It serves as a discrete solution for replacing older bipolar transistor technologies in modern efficient power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

The APT8065BVRG is a documented alternative within the same product family offering identical voltage ratings but with a slightly higher on-resistance specification. Verify pinout compatibility and thermal resistance values before substituting.