APT9F100B

$3.56

Description：MOSFET N-CH 1000V 9A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:793c15849541 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT9F100B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 9A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT9F100B

Description：MOSFET N-CH 1000V 9A TO247
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2606 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：337W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT9F100B

APT9F100B

Single FETs, MOSFETs Overview

The APT9F100B is a single N-channel FREDFET MOS 8 transistor manufactured by Microchip Technology. It features a 1000 V drain-source breakdown voltage and a continuous drain current of 9 A in the TO-247 package. The device exhibits a maximum on-state resistance of 1600 milliohms and a gate threshold voltage of 2.5 V. Key switching parameters include a typical turn-on delay of 24 ns, fall time of 24 ns, and rise time of 26 ns. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 337 W.

Single FETs, MOSFETs Feature Summary

High-speed switching capability utilizing Power MOS 8 technology for reduced electromagnetic interference.
Robust high-voltage handling with a 1000 V drain-source breakdown rating.
Enhanced thermal performance supporting operation up to +150°C junction temperature.

Single FETs, MOSFETs Applications

Switch-mode power supplies
High-frequency inverters
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly from Microchip Technology documentation before procurement. Confirm that the TO-247 package dimensions match your PCB footprint requirements. Ensure compliance with RoHS directives as specified in the official product specifications. Cross-reference part numbers carefully to distinguish between similar variants within the APT series.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and fast switching speeds. The 1600 milliohm on-resistance balances conduction losses with switching efficiency. Consider the 9 A continuous current rating against your peak load requirements. The TO-247 package facilitates effective heat sinking for high-power density designs.

Single FETs, MOSFETs Part Context

The APT9F100B belongs to the Power MOS 8 family, designed for high-performance switch-mode applications. This series emphasizes low EMI characteristics and high-speed operation. It serves as a discrete solution for power conversion systems where reliability and thermal stability are critical. The component integrates advanced silicon technology for improved switching performance.