APTM120U10DAG

$184.42

Description：MOSFET N-CH 1200V 160A SP6
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:f4a55fdb1074 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APTM120U10DAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1200V 160A SP6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM120U10DAG

Description：MOSFET N-CH 1200V 160A SP6
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：120mOhm @ 58A, 10V
Vgs(th) (Max) @ Id：5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs：1100 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：28900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3290W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP6
Package / Case：SP6

Single FETs, MOSFETs datasheet and documents for APTM120U10DAG

APTM120U10DAG

Single FETs, MOSFETs Overview

The APTM120U10DAG is a high-voltage power MOSFET module manufactured by Microsemi Corporation. It integrates Power MOS 7 technology with an AlN substrate for enhanced thermal performance. The device features a 1200V drain-source breakdown voltage and supports continuous drain currents of 116A at 25°C case temperature. It includes integrated series diodes rated for 180A DC forward current. Key electrical parameters include a maximum on-resistance of 120mΩ, total gate charge of 1100nC, and avalanche energy ratings up to 3200mJ.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology providing low on-resistance and reduced switching losses
AlN substrate designed for improved thermal management and low junction-to-case resistance
Kelvin source connection facilitates easy drive circuit implementation
Integrated series diodes with high surge current capability

Single FETs, MOSFETs Applications

Zero Current Switching resonant mode converters
High frequency power supply designs
Industrial motor drives
Inverter applications requiring rugged semiconductor performance

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the datasheet Rev 2 June 2008 documentation. Confirm that the SP6 package outline matches the required mechanical footprint. Ensure handling procedures account for Electrostatic Discharge sensitivity as specified in application note APT0502. Check mounting torque specifications for M5 terminals during installation.

Single FETs, MOSFETs Selection Notes

Select this component when high-frequency operation and robust thermal dissipation are critical requirements. The integrated Kelvin source simplifies gate drive layout compared to standard packages. Consider the 1200V rating for systems operating near or above 600V bus voltages. Evaluate the 390W power dissipation limit relative to the heatsink capacity.

Single FETs, MOSFETs Part Context

This module belongs to the APTM120 family of high-voltage discrete semiconductors from Microsemi. It utilizes the SP6 isolated package design, allowing direct mounting to heatsinks. The product line emphasizes ruggedness and high integration levels for demanding power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Microsemi substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics before integrating any substitute components.