AUIRF2805

Single FETs, MOSFETs Overview

The AUIRF2805 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 55 V and a continuous drain current of 175 A at 25°C case temperature. The device exhibits a typical on-resistance of 3.9 mΩ, with a maximum rating of 4.7 mΩ at 10 V gate drive. Key electrical parameters include a total gate charge of 150 nC, a threshold voltage range of 2.0 V to 4.0 V, and a maximum junction temperature of 175 °C. It utilizes a TO-220 package.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards
• Optimized thermal performance with low junction-to-case resistance
• Enhanced avalanche ruggedness for robust operation in inductive loads

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• High-side and low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official documentation before procurement. Confirm that the component meets the required AEC-Q101 qualification level for your target application. Ensure compatibility with your assembly process regarding the TO-220 mounting requirements and torque specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a 55 V system architecture. Consider the 175 A continuous drain current limit and the 4.7 mΩ maximum on-resistance for efficiency calculations. Evaluate the thermal management needs based on the 0.45 °C/W junction-to-case thermal resistance to ensure reliable operation under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs, specifically tailored for automotive environments. It integrates advanced silicon technology to deliver superior switching performance compared to standard industrial counterparts. The device is engineered to withstand harsh automotive electrical conditions while maintaining low conduction losses.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for cross-references. Verify pinout compatibility and electrical parameter alignment with any substitute components.