AUIRF2805STRL

Single FETs, MOSFETs Overview

The AUIRF2805STRL is an automotive-grade N-channel MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a 55V drain-source breakdown voltage and a continuous drain current of 135A. The device offers a low on-resistance of 4.7mΩ at room temperature. It operates within a junction temperature range of -55°C to 175°C. The component is housed in a DPAK-3 (TO-252-3) surface-mount package. Key electrical characteristics include a gate charge of 150nC and a power dissipation rating of 200W.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for high reliability.
• Low thermal resistance design enabling efficient heat dissipation in compact packages.
• Enhanced switching performance optimized for high-frequency power conversion applications.

Single FETs, MOSFETs Applications

• Automotive DC-DC converters
• Motor control circuits
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'STRL' against official datasheets to confirm reel packaging specifications. Confirm RoHS compliance status as required by project regulations. Ensure the component meets AEC-Q101 grade requirements for the intended automotive application environment. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with low on-resistance is required for automotive environments. Consider the 55V voltage rating and 135A current capability for load matching. Evaluate the DPAK-3 package for thermal and mechanical fit within the PCB layout. Compare switching losses and gate charge parameters against alternative devices for efficiency optimization.

Single FETs, MOSFETs Part Context

This component belongs to the IRF2805 family of power MOSFETs manufactured by Infineon Technologies. The family is designed for general-purpose power switching applications. The automotive variant ensures durability under harsh operating conditions. It serves as a discrete solution for controlling power flow in electronic systems requiring high current handling capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for equivalent automotive-grade MOSFETs. Verify pinout compatibility and thermal characteristics before substitution. Ensure any alternative device meets the same voltage and current ratings. Check for form, fit, and function equivalence in the target circuit design.