AUIRF2907Z

Single FETs, MOSFETs Overview

The AUIRF2907Z is an automotive-grade N-channel HEXFET power MOSFET in a TO-220AB package. It features a maximum drain-source voltage of 75V and a silicon-limited continuous drain current of 170A at 25°C, constrained to 75A by the package. The device exhibits a maximum on-resistance of 4.5mΩ at VGS=10V and ID=75A. Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge up to 270nC, and a maximum power dissipation of 300W. It supports a junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability applications
• Advanced planar technology enables ultra-low on-resistance per silicon area
• Capable of repetitive avalanche operation up to maximum junction temperature
• Fast switching speed combined with improved thermal performance

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency motor control circuits
• DC-DC converter designs requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the specific order includes the 'AU' prefix indicating automotive qualification status. Ensure packaging matches the specified tube format containing 50 units. Validate RoHS compliance documentation against current regulatory requirements before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability standards are mandatory for the design. The TO-220AB package suits through-hole mounting where board space allows. Consider the package-limited current rating of 75A rather than the silicon limit for thermal planning. Evaluate the 4.5mΩ on-resistance impact on overall system efficiency under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents the automotive variant of the IRF2907Z series, distinguished by its qualification to AEC-Q101 standards. The device utilizes silicon-based planar technology optimized for low resistance and robust switching characteristics in demanding environments.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 75V rating, TO-220AB package, and automotive qualification level. Verify pinout compatibility and ensure equivalent on-resistance and thermal resistance values. Cross-reference with other Infineon HEXFET parts sharing the AU prefix for guaranteed functional interchangeability.