Single FETs, MOSFETs AUIRF3315S product image

AUIRF3315S

  • Description:MOSFET N-CH 150V 21A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:e2ffe375d8ee Category: Brand:

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AUIRF3315S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 21A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3315S

  • Description:MOSFET N-CH 150V 21A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:82mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 94W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF3315S

AUIRF3315S

Single FETs, MOSFETs Overview

The AUIRF3315S is an automotive-grade N-channel HEXFET power MOSFET in a D2-Pak package. It features a maximum drain-source voltage of 150 V and a continuous drain current of 21 A at 25°C case temperature. The device has a maximum on-resistance of 82 mΩ at VGS = 10V. Total gate charge is 95 nC, with gate-to-drain charge at 47 nC. Peak diode recovery dv/dt is rated at 2.5 V/ns. Thermal resistance junction-to-case is 1.6 K/W, supporting operation up to 175°C.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Fast switching capability with ruggedized design
  • Fully avalanche rated with repetitive avalanche allowance

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side load switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (Tube or Tape & Reel) matches your assembly requirements. Confirm that the component meets the required AEC-Q101 qualification level for your target automotive application. Ensure thermal management designs account for the specified junction-to-case resistance values under steady-state conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high reliability and automotive compliance are required. The 150V rating suits medium-voltage automotive networks. Consider the 21A continuous current limit and 82mΩ on-resistance for efficiency calculations. Verify compatibility with standard D2-Pak footprints and soldering profiles during PCB layout.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs. It utilizes advanced planar technology to achieve low on-resistance per silicon area. The device is designed for efficient and reliable performance in automotive environments. It combines fast switching speeds with a ruggedized structure typical of HEXFET designs.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and package dimensions against existing designs. Verify that replacement devices meet or exceed the 150V breakdown voltage and 21A current ratings. Ensure thermal resistance and gate charge specifications align with the original circuit requirements.

AUIRF3315SAUIRF3315S

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