Single FETs, MOSFETs AUIRF4104S product image

AUIRF4104S

$1.19
  • Description:MOSFET N-CH 40V 75A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:6bc41a54150e Category: Brand:

  
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AUIRF4104S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 40V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF4104S

  • Description:MOSFET N-CH 40V 75A D2PAK
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF4104S

AUIRF4104S

Single FETs, MOSFETs Overview

The AUIRF4104S is an N-channel enhancement mode MOSFET from the HEXFET series, manufactured by Infineon (formerly International Rectifier). It features a maximum drain-source voltage of 40 V and a continuous drain current of 120 A. The device utilizes a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 5.5 mΩ, a gate threshold voltage range of 2 V to 4 V, and a typical gate charge of 68 nC at 10 V. It supports a maximum power dissipation of 140 W and operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability for high-performance switching applications
  • Low on-resistance for efficient power handling
  • Enhanced gate drive characteristics for optimized switching

Single FETs, MOSFETs Applications

  • Automotive DC motor drives
  • High-side and low-side switching in automotive systems
  • General purpose power switching

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation, as Infineon acquired International Rectifier. Confirm the specific suffix indicates automotive qualification if required. Ensure the D2PAK package matches the PCB footprint. Check RoHS compliance status against current production batches. Validate that the 120 A rating aligns with thermal management capabilities in the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade N-channel MOSFET performance. The 40 V rating suits low-voltage automotive systems. Consider the 120 A current capacity and 5.5 mΩ resistance for efficiency needs. The D2PAK package facilitates surface-mount assembly. Verify thermal requirements match the 140 W dissipation capability.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for high current density and low on-resistance. Originally developed by International Rectifier, it is now produced under Infineon Technologies. The AUIRF prefix typically denotes automotive-grade variants, ensuring higher reliability standards compared to standard industrial components.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes like IRF4104S or AUIRFU4104, noting package differences. Ensure any replacement maintains the 40 V rating and comparable Rds(on). Verify pinout compatibility for D2PAK packages. Automotive grade equivalents should be prioritized for critical applications.

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