AUIRF8736M2TR

$4.22

Description：MOSFET N-CH 40V 27A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4591ae872f39 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF8736M2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 27A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF8736M2TR

Description：MOSFET N-CH 40V 27A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：27A (Ta), 137A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.9mOhm @ 85A, 10V
Vgs(th) (Max) @ Id：3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：204 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6867 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DirectFET™ Isometric M4
Package / Case：DirectFET™ Isometric M4

Single FETs, MOSFETs datasheet and documents for AUIRF8736M2TR

AUIRF8736M2TR

Single FETs, MOSFETs Overview

The AUIRF8736M2TR is an automotive-grade N-channel enhancement mode power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It utilizes DirectFET M4 packaging to achieve a low profile of 0.7mm and a footprint comparable to SO-8 or 5x6mm PQFN. The device features a drain-to-source voltage (VDS) of 40V and a continuous drain current (ID) of 137A at 25°C case temperature. Typical on-resistance (RDS(on)) is 1.3mΩ with a maximum of 1.9mΩ at VGS=10V. Total gate charge (Qg) is typically 136nC. It supports a junction temperature range of -55°C to +175°C and allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

Advanced DirectFET packaging enables dual-sided cooling for high thermal transfer efficiency in automotive systems.
Optimized for heavy load applications including motor drives and DC-DC converters on ICE, HEV, and EV platforms.
Supports repetitive avalanche energy up to the maximum junction temperature limit.
Low parasitic parameters combined with ultra-low on-resistance per silicon area.

Single FETs, MOSFETs Applications

Automotive motor drive systems
DC-DC converter circuits
Heavy load applications on Internal Combustion Engine (ICE) platforms
Hybrid Electric Vehicle (HEV) power systems
Electric Vehicle (EV) power architectures

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number includes the 'AU' prefix to ensure compliance with automotive industry requirements regarding product discontinuance and process change notifications. Check for RoHS and Halogen-free compliance status prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when system design requires high current handling capability within a compact surface-mount form factor. The DirectFET M4 package is suitable for designs needing compatibility with standard PCB assembly equipment and vapor phase, infrared, or convection soldering techniques. Ensure thermal management strategies utilize the dual-sided cooling capability to maximize performance under heavy load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET Power MOSFET family, combining advanced silicon technology with DirectFET packaging. It is designed to offer substantial system-level savings and performance improvements over traditional packages. The 'AU' designation indicates specific automotive qualification standards are met, distinguishing it from industrial or consumer grade variants within the broader product line.