Single FETs, MOSFETs AUIRFB4610 product image

AUIRFB4610

  • Description:MOSFET N-CH 100V 73A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:b432d600ab81 Category: Brand:

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AUIRFB4610 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 73A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFB4610

  • Description:MOSFET N-CH 100V 73A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id:4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):190W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFB4610

AUIRFB4610

Single FETs, MOSFETs Overview

The AUIRFB4610 is an N-channel HEXFET power MOSFET designed for automotive applications. It features a maximum drain-source voltage of 100 V and a continuous drain current of 73 A at 25°C case temperature. The device exhibits a typical on-resistance of 11 mΩ, with a maximum rating of 14 mΩ at VGS = 10V. It supports a pulsed drain current of 290 A and operates within a junction temperature range of -55°C to +175°C. The component is housed in a TO-220AB package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards
  • Advanced process technology enabling ultra-low on-resistance
  • Enhanced dV/dt and dI/dT capability for improved switching performance
  • Repetitive avalanche energy allowed up to the maximum junction temperature

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • High-efficiency motor control circuits
  • DC-DC converter topologies requiring robust thermal performance

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required package type, as the S suffix indicates D2-Pak packaging while the B suffix denotes TO-220. Confirm compliance with RoHS directives and ensure the supplier provides documentation verifying AEC-Q101 qualification status for automotive deployment requirements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high reliability under extreme thermal conditions up to 175°C. The low on-resistance minimizes conduction losses, making it suitable for high-current applications. Ensure gate drive voltages remain within the specified limits to maintain optimal switching characteristics and prevent device degradation.

Single FETs, MOSFETs Part Context

This device belongs to the Infineon HEXFET family, utilizing advanced processing techniques to achieve low resistance per silicon area. It is specifically engineered to meet the rigorous demands of automotive environments, offering enhanced efficiency and reliability compared to standard industrial-grade counterparts.

Single FETs, MOSFETs Replacement Considerations

The AUIRFS4610 serves as a direct functional equivalent but utilizes D2-Pak (TO-263) surface-mount packaging instead of the through-hole TO-220 form factor. Designers must account for differences in thermal dissipation characteristics and physical footprint when substituting between these variants.

AUIRFB4610AUIRFB4610

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