Single FETs, MOSFETs AUIRFB8407 product image

AUIRFB8407

$2.99
  • Description:MOSFET N-CH 40V 195A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:36967ebec86e Category: Brand:

  
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AUIRFB8407 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFB8407

  • Description:MOSFET N-CH 40V 195A TO220AB
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFB8407

AUIRFB8407

Single FETs, MOSFETs Overview

The AUIRFB8407 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, specifically designed for high-efficiency applications. The device supports a maximum drain-source voltage of 40 V and offers a continuous drain current capability of up to 250 A at 25°C case temperature (silicon limited). Key electrical parameters include a typical RDS(on) of 1.6 mΩ and a maximum of 2.0 mΩ at TJ = 25°C. It features a junction-to-case thermal resistance of 0.65 °C/W max and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Advanced process technology enabling ultra-low on-resistance
  • Automotive qualification compliant with AEC-Q101 standards
  • Fast switching speed for improved efficiency
  • Repetitive avalanche rating allowed up to Tjmax

Single FETs, MOSFETs Applications

  • Electric Power Steering (EPS)
  • Battery Switch
  • Start/Stop Micro Hybrid systems
  • Heavy Loads
  • DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package type required for your design, as the base part number corresponds to the TO-220AB form factor. Confirm that the component meets the necessary automotive quality standards for your target application environment. Ensure proper thermal management solutions are integrated given the high current capabilities and power dissipation ratings specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with low conduction losses. Consider the TO-220AB package suitability for through-hole mounting and verify that the 40V voltage rating aligns with system requirements. Evaluate thermal constraints based on the specified junction-to-case resistance and ensure gate drive voltages support the threshold characteristics for optimal switching.

Single FETs, MOSFETs Part Context

This part belongs to the AUIRF series of automotive power MOSFETs from Infineon. It shares core technological features with other members like the AUIRFS8407 and AUIRFSL8407, differing primarily in package configuration. The series represents Gen 12.7 technology, optimized for reliability and efficiency in demanding automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AUIRFS8407 (D2Pak) and AUIRFSL8407 (TO-262), which share identical electrical specifications but differ in package style. Verify pinout compatibility and thermal interface requirements when transitioning between these package variants.

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