Single FETs, MOSFETs AUIRFL014NTR product image

AUIRFL014NTR

  • Description:MOSFET N-CH 55V 1.5A SOT-223
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:554f9fbf85e3 Category: Brand:

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AUIRFL014NTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 1.5A SOT-223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFL014NTR

  • Description:MOSFET N-CH 55V 1.5A SOT-223
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:160mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRFL014NTR

AUIRFL014NTR

Single FETs, MOSFETs Overview

The AUIRFL014NTR is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance per silicon area, providing high efficiency and reliability for demanding applications. The device features a ruggedized design with fast switching capabilities and is fully avalanche rated, allowing repetitive avalanche operation up to the maximum junction temperature of 150°C. Packaged in SOT-223, it supports continuous drain currents up to 2.7A at 25°C and offers a maximum RDS(on) of 0.16Ω.

Single FETs, MOSFETs Feature Summary

  • Advanced Planar Technology
  • Low On-Resistance
  • Dynamic dv/dt Rating
  • Fast Switching

Single FETs, MOSFETs Applications

  • Automotive Applications
  • Cellular Design

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number matches the required automotive qualification standards, specifically AEC-Q101 compliance. Confirm the package type is SOT-223 and ensure the ordering suffix corresponds to the tape and reel configuration if automated assembly is planned. Cross-reference the manufacturer's latest documentation to confirm RoHS compliance status and any updates to the qualification level or pinout definitions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance in automotive environments. Consider its low on-resistance and fast switching characteristics for efficient power management. Ensure the thermal design accommodates the specified junction-to-ambient resistance values under expected operating conditions. Verify that the gate drive requirements align with the threshold voltage and total gate charge specifications for optimal switching performance.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically engineered for automotive applications, leveraging advanced processing techniques to enhance performance. The device represents a specialized variant within the broader product line, tailored to meet the stringent reliability and durability requirements typical of automotive electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for confirmed substitute part numbers. Do not assume compatibility based solely on similar electrical parameters without verifying package dimensions, pin configurations, and specific automotive qualification standards.

Single FETs, MOSFETs FAQ

Is the AUIRFL014NTR suitable for repetitive avalanche operation?

Yes, the device is fully avalanche rated and allows repetitive avalanche operation up to the maximum junction temperature.

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is 150°C.

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