AUIRFR120Z

$0.54

Description：MOSFET N-CH 100V 8.7A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube,Tube

SKU:34b7725f540e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR120Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 8.7A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR120Z

Description：MOSFET N-CH 100V 8.7A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id：4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：310 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR120Z

AUIRFR120Z

Single FETs, MOSFETs Overview

The AUIRFR120Z is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 100V drain-source voltage rating and utilizes advanced process technology to achieve a maximum on-resistance of 190mΩ at 10V gate drive. The device supports a continuous drain current of 8.7A at 25°C and operates with a junction temperature range up to 175°C. Packaged in D-Pak (TO-252), it offers fast switching characteristics and allows repetitive avalanche operation, ensuring high reliability for demanding automotive environments.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with specified standards
Advanced HEXFET process technology for low on-resistance
High thermal stability supporting 175°C junction temperatures
Robust performance under repetitive avalanche conditions

Single FETs, MOSFETs Applications

Automotive power distribution systems
DC-DC converter circuits
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Z' against official Infineon documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets the required automotive quality standards for your target application. Check for any lead-free or RoHS compliance declarations in the latest datasheet. Ensure the ordering part number matches the exact electrical parameters needed.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-rated N-channel MOSFET with a 100V breakdown voltage is required. It is suitable for designs needing low conduction losses and high thermal endurance. Consider the D-Pak package constraints for PCB layout and heat dissipation. Evaluate the gate charge requirements against your driver capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, designed for high-efficiency power switching. It represents the automotive variant of the IRFR120Z series, offering enhanced reliability and qualification for vehicle electronics. The device integrates optimized silicon technology to balance conduction and switching losses effectively.