AUIRFR3806TRL

Single FETs, MOSFETs Overview

The AUIRFR3806 is an automotive-grade HEXFET power MOSFET featuring a D-Pak (TO-252AA) package. It provides a drain-source breakdown voltage of 60V and supports continuous drain currents up to 43A at 25°C case temperature, with pulsed capability reaching 170A. The device exhibits a typical on-resistance of 12.6mΩ and a maximum of 15.8mΩ at VGS=10V. Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 22nC typ/30nC max, and a peak diode recovery dv/dt rating of 24V/ns. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments.
• Advanced process technology enabling ultra-low on-resistance per silicon area for high efficiency.
• Enhanced repetitive avalanche energy rating allowing operation under inductive switching stress.
• High-speed switching characteristics combined with robust dynamic dV/dt rating.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's current datasheet to ensure correct packaging form. Confirm that the component meets the required automotive qualification level for the target application environment. Check for any recent product change notices regarding pinout or thermal characteristics before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring automotive-grade reliability and low conduction losses. Ensure the thermal management design accommodates the specified junction-to-ambient resistance values. Verify that the gate drive voltage aligns with the optimal RDS(on) performance conditions defined in the static characteristics table.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of N-channel power MOSFETs. It utilizes advanced processing techniques to minimize resistance while maintaining high thermal stability. The device is specifically engineered to meet the stringent durability requirements of automotive electronics, distinguishing it from standard industrial counterparts through its validated qualification standards.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified equivalents. Ensure any replacement maintains the same package outline and pin configuration to fit existing footprints without redesign.

Single FETs, MOSFETs FAQ

Is the AUIRFR3806 qualified for automotive applications?

Yes, the component has passed Automotive qualification standards as specified by AEC-Q101.

What is the maximum repetitive avalanche energy allowed?

The device allows repetitive avalanche energy up to TJmax, with specific limits defined by the avalanche current and pulse width curves in the datasheet.