Single FETs, MOSFETs AUIRFR4105 product image

AUIRFR4105

  • Description:MOSFET N-CH 55V 20A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:f70cd0e9f6b2 Category: Brand:

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AUIRFR4105 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 20A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR4105

  • Description:MOSFET N-CH 55V 20A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:45mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR4105

AUIRFR4105

Single FETs, MOSFETs Overview

The AUIRFR4105 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252AA) package and utilizes advanced planar technology to achieve low on-resistance per silicon area. The device supports a drain-to-source voltage of 55V, with a maximum static drain-to-source on-resistance of 45mΩ at VGS=10V and ID=16A. Continuous drain current ratings are 27A (silicon limited) and 20A (package limited) at TC=25°C. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified according to AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Fast switching capability with dynamic dV/dT rating
  • Fully avalanche rated with repetitive avalanche allowance up to Tjmax

Single FETs, MOSFETs Applications

  • Automotive electronic systems
  • General-purpose switching applications requiring ruggedized design

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing process. The base part number AUIRFR4105 is available in tube form, while AUIRFR4105TRL is available in tape and reel format. Confirm that the component meets the necessary automotive qualification standards for your intended application before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and ruggedness are primary requirements. The device offers a balance of low conduction losses and fast switching speeds suitable for various power management tasks. Ensure thermal management aligns with the specified linear derating factor and junction temperature limits.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically engineered for automotive environments, combining high efficiency with robust performance characteristics. The D-Pak package provides a cost-effective solution for commercial-industrial applications as well.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IRFR4105TRPBF and IRFL4105TR. Verify pinout compatibility and electrical parameter alignment, particularly regarding continuous current ratings and package limitations, when substituting these parts.

Single FETs, MOSFETs FAQ

Is the AUIRFR4105 fully avalanche rated?

Yes, the AUIRFR4105 is fully avalanche rated and allows for repetitive avalanche operation up to the maximum junction temperature.

What is the maximum operating junction temperature?

The maximum operating junction temperature for the AUIRFR4105 is +175°C.

AUIRFR4105AUIRFR4105

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