AUIRFS3004

Single FETs, MOSFETs Overview

The AUIRFS3004 is an automotive-grade, N-channel power MOSFET from Infineon Technologies utilizing Gen 10.7 technology. It features a maximum drain-source voltage (VDS) of 40 V and a typical on-resistance (RDS(on)) of 1.75 mΩ at 10 V gate drive. The device supports a continuous drain current (ID) of up to 195 A at 25°C and handles a total power dissipation (PTOT) of 380 W. Key electrical parameters include a maximum junction temperature (TJ) of 175 °C, a thermal resistance junction-to-case (RthJC) of 0.4 K/W, and a typical total gate charge (QG) of 160 nC. It is housed in a D2PAK surface-mount package.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
• Optimized body diode characteristics featuring enhanced dv/dt and di/dt capabilities for robust synchronous rectification.
• Improved ruggedness regarding gate integrity, avalanche energy handling, and dynamic dv/dt performance.

Single FETs, MOSFETs Applications

• High-efficiency synchronous rectification in switching mode power supplies (SMPS).
• Uninterruptible power supply (UPS) systems.
• High-speed power switching circuits.
• Hard-switched and high-frequency power conversion applications.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against the official Infineon datasheet to confirm the exact package variant and tape-and-reel specifications. Ensure the component meets the required AEC-Q101 grade for your target automotive application. Cross-reference the manufacturing date code and material content declaration to comply with regional regulatory standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing for 40 V automotive systems requiring low conduction losses and high current density. The 1.75 mΩ RDS(on) minimizes heat generation in high-current paths. Consider the D2PAK footprint for PCB layout constraints and verify that the driver circuit can handle the 160 nC gate charge efficiently to maintain optimal switching speeds without excessive drive current requirements.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ Power-Transistors family, specifically leveraging Gen 10.7 trench technology. It is designed to replace older HEXFET® generations by offering superior switching performance and thermal management within the same form factor. The automotive designation indicates it is engineered for the stringent quality and longevity demands of modern vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same series include IRFS3004 and IRFB3004, though these lack automotive certification. For non-automotive equivalents, verify that the replacement maintains the 40 V rating, 1.75 mΩ max RDS(on), and D2PAK package dimensions to ensure mechanical fit and electrical compatibility.