AUIRFS8405

Description：MOSFET N-CH 40V 120A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:5932d2bcb431 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS8405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8405

Description：MOSFET N-CH 40V 120A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：161 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5193 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：163W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS8405

AUIRFS8405

Single FETs, MOSFETs Overview

The AUIRFS8405 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 40V drain-source breakdown voltage and utilizes advanced process technology to achieve ultra-low on-resistance, with typical and maximum values of 1.9mΩ and 2.3mΩ respectively at VGS=10V and ID=100A. The device supports continuous drain currents up to 193A (silicon limited) or 120A (package limited). Designed for high reliability, it operates at junction temperatures up to 175°C and allows repetitive avalanche operation up to Tjmax.

Single FETs, MOSFETs Feature Summary

Advanced processing techniques enable extremely low on-resistance per silicon area.
Capable of operating at junction temperatures up to 175°C.
Features fast switching speeds and improved repetitive avalanche ratings.
Qualified for automotive applications according to AEC-Q101 standards.

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid systems
Heavy Loads
DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base part number corresponds to the D2PAK (TO-263) form factor. Confirm that the design accommodates the thermal resistance characteristics provided in the datasheet. Ensure the application environment meets the specified temperature range and electrical stress limits defined in the absolute maximum ratings section.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with low conduction losses. The device is suitable for applications demanding high current handling capabilities within a 40V system. Consider the thermal management requirements associated with the TO-263 package and the specific gate charge parameters for driver selection.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically engineered for automotive environments, distinguishing itself through enhanced ruggedness and reliability compared to standard industrial components. The 'AU' prefix indicates adherence to automotive industry requirements regarding product discontinuance and process change notifications.