AUIRFS8409-7TRL

$4.60

Description：MOSFET N-CH 40V 240A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9bea64551221 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS8409-7TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 240A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8409-7TRL

Description：MOSFET N-CH 40V 240A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：460 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13975 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for AUIRFS8409-7TRL

AUIRFS8409-7TRL

Single FETs, MOSFETs Overview

The AUIRFS8409-7TRL is an automotive-grade N-channel HEXFET power MOSFET from Infineon Technologies. It features a D2PAK (TO-263) 7-pin surface-mount package and operates with a maximum drain-source voltage of 40 V. The device delivers a continuous drain current of up to 522 A (silicon limited) or 240 A (package limited). Its typical on-resistance is 0.55 mΩ, with a maximum rating of 0.75 mΩ at 10 V gate drive. Key electrical parameters include a total gate charge of 305 nC, a maximum power dissipation of 375 W, and a junction temperature range spanning -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Qualified for automotive applications under the AEC-Q101 standard
Engineered for low static and dynamic conduction losses
Optimized thermal resistance for efficient heat dissipation
Enhanced avalanche ruggedness for robust circuit protection

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch circuits
Start/Stop Micro Hybrid systems
Heavy Load Drivers

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required tape and reel configuration. Confirm the component meets specific automotive qualification standards before integration. Ensure the selected package variant aligns with the intended PCB footprint and thermal management design requirements.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low on-resistance are critical for system efficiency. Evaluate the thermal performance against the application's ambient conditions and derating curves. Consider the package limitations versus silicon limits when designing for peak current scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed by Infineon Technologies. It utilizes advanced silicon technology to achieve superior performance metrics compared to previous generations. The product line focuses on providing reliable solutions for demanding power switching environments.