Single FETs, MOSFETs AUIRFU540Z product image

AUIRFU540Z

  • Description:MOSFET N-CH 100V 35A IPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:186b009d33c3 Category: Brand:

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AUIRFU540Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 35A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFU540Z

  • Description:MOSFET N-CH 100V 35A IPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:28.5mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1690 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):91W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AUIRFU540Z

AUIRFU540Z

Single FETs, MOSFETs Overview

The AUIRFU540Z is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 100V and a continuous drain current of 35A at 25°C case temperature. The device utilizes I-Pak (TO-251AA) packaging for surface-mount applications. Key electrical characteristics include a typical on-resistance of 22.5mΩ and a maximum of 28.5mΩ at VGS=10V. It supports a junction temperature range from -55°C to +175°C, with a maximum power dissipation of 91W.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards
  • Optimized low on-resistance per silicon area using advanced processing techniques
  • Enhanced repetitive avalanche rating for improved ruggedness
  • Fast switching speed capabilities

Single FETs, MOSFETs Applications

  • Automatic Voltage Regulator (AVR)
  • Solenoid Injection systems
  • Body Control modules
  • Low Power Automotive Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'U' corresponds to the I-Pak tube package configuration when sourcing. Confirm that the component meets the required automotive reliability standards for the target application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade reliability and high efficiency in low-power switching scenarios. The I-Pak package offers a compact solution for surface-mount designs where space is constrained. Consider the 175°C junction temperature capability for high-temperature environments and evaluate the avalanche energy ratings if inductive load switching is anticipated.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed by Infineon Technologies. It shares core technology with the D-Pak variant (AUIRFR540Z), differing primarily in the physical package type. The I-Pak form factor provides a smaller footprint compared to standard TO-252 packages while maintaining similar electrical performance characteristics suitable for automotive electronics.

Single FETs, MOSFETs Replacement Considerations

The AUIRFR540Z serves as a direct functional equivalent with identical electrical specifications but utilizes a D-Pak (TO-252AA) package instead of the I-Pak. Designers must verify mechanical fit and thermal interface compatibility when substituting between these package variants.

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