AUIRFZ24NSTRL

$1.24

Description：MOSFET N-CH 55V 17A DPAK
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk

SKU:eab63f68307a Category: Single FETs, MOSFETs Brand: International Rectifier

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Product introduction

AUIRFZ24NSTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 55V 17A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ24NSTRL

Description：MOSFET N-CH 55V 17A DPAK
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：70mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：370 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFZ24NSTRL

AUIRFZ24NSTRL

Single FETs, MOSFETs Overview

The AUIRFZ24NSTRL is an automotive-grade HEXFET power MOSFET manufactured by International Rectifier (Infineon). It features a 55V drain-source voltage rating and a maximum continuous drain current of 17A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.07Ω, ensuring low conduction losses. Designed for high reliability, it supports a junction operating temperature up to 175°C and includes avalanche-rated capabilities for repetitive energy handling.

Single FETs, MOSFETs Feature Summary

Automotive qualified with advanced planar technology for low unit die resistance
Capable of 175°C junction operating temperature for enhanced thermal performance
Fast switching characteristics with dynamic dv/dt and di/dt capability
Fully rated for repetitive avalanche energy up to maximum junction temperature

Single FETs, MOSFETs Applications

Automotive power management systems
Motor control applications
High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'STR' indicates tape and reel packaging when sourcing. Confirm RoHS compliance status as indicated by the 'PBF' designation in related part numbers. Ensure the component matches the D2PAK package form factor required for the target PCB layout. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or thermal impedance values prior to final design approval.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive-grade N-channel MOSFETs with low on-resistance. The 55V rating suits low-voltage automotive networks. Consider the 17A current limit and 0.07Ω resistance for thermal management calculations. The 175°C rating allows operation in high-temperature environments without derating as severely as standard industrial parts.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from International Rectifier, now part of Infineon Technologies. The series is characterized by advanced process technology aimed at reducing silicon area and conduction losses. Automotive variants like this model are specifically engineered to meet stringent reliability standards for vehicle electronics.