Single FETs, MOSFETs AUIRFZ44Z product image

AUIRFZ44Z

  • Description:MOSFET N-CH 55V 51A TO220
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:548d1c5fd238 Category: Brand:

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AUIRFZ44Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 51A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFZ44Z

  • Description:MOSFET N-CH 55V 51A TO220
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:13.9mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):80W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFZ44Z

AUIRFZ44Z

Single FETs, MOSFETs Overview

The AUIRFZ44Z is an automotive-grade, single N-channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It utilizes HEXFET technology and is housed in a D2PAK (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 55 V and supports a continuous drain current of 51 A at case temperature. Its maximum on-resistance is specified at 13.9 mΩ when driven by a gate-source voltage of 10 V. The component operates within a junction temperature range of -55 °C to +175 °C and dissipates up to 80 W of power. It holds AEC-Q101 qualification for automotive reliability.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle environments.
  • HEXFET technology architecture designed to deliver low conduction losses through minimized on-resistance.
  • Enhanced thermal management capabilities supporting high power dissipation and extended operation at elevated junction temperatures.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side switching applications in vehicle electronics
  • DC-DC converter circuits for electric mobility

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix designation, as the base model may correspond to variants like AUIRFZ44ZS or AUIRFZ44ZSTRL with specific packaging options. Confirm current lifecycle status, as availability may be limited or discontinued. Ensure the selected variant matches the required tape-and-reel specifications for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 55 V rating and low on-resistance in compact surface-mount layouts. Verify that the driving circuit can supply sufficient gate charge to achieve the specified 10 V drive level. Consider the thermal resistance characteristics of the D2PAK package to ensure adequate heat sinking for the intended load currents.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's automotive HEXFET portfolio, which integrates advanced silicon technologies for high-efficiency power switching. The series is engineered to meet stringent automotive quality standards while providing optimized electrical performance for modern vehicle architectures.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AUIRFZ44ZS and AUIRFZ44ZSTRL, which share identical electrical characteristics but differ in packaging format or reel configuration. Cross-reference datasheets to confirm pinout compatibility and thermal parameters before substitution.

AUIRFZ44ZAUIRFZ44Z

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