AUIRL7736M2TR

$1.49

Description：MOSFET N-CH 40V 179A DIRECTFET
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk

SKU:81560c27a36f Category: Single FETs, MOSFETs Brand: International Rectifier

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AUIRL7736M2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 40V 179A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRL7736M2TR

Description：MOSFET N-CH 40V 179A DIRECTFET
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：179A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 67A, 10V
Vgs(th) (Max) @ Id：2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：78 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：5055 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DirectFET™ Isometric M4
Package / Case：DirectFET™ Isometric M4

Single FETs, MOSFETs datasheet and documents for AUIRL7736M2TR

AUIRL7736M2TR

Single FETs, MOSFETs Overview

The AUIRL7736M2TR is an automotive-grade N-channel MOSFET from Infineon Technologies, utilizing DirectFET M4 technology. It features a maximum drain-source voltage of 40 V and a typical gate charge of 52 nC at 10 V. The device offers a maximum on-resistance of 3 mΩ at 10 V and supports a continuous drain current of 179 A at 25°C. Thermal performance includes a junction-to-case thermal resistance of 2.4 K/W and a maximum power dissipation of 63 W. Operating temperatures range from -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with industry standards for reliability in vehicle environments.
DirectFET M4 package design enables high-power density and efficient thermal management.
Low on-resistance characteristics support high-efficiency power switching applications.

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-current motor control circuits
DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturing origin details, as assembly and diffusion sites are subject to change. Confirm that the component meets the required automotive quality standards for your specific application environment. Ensure compatibility with the DirectFET M4 footprint during PCB layout. Check for any obsolescence notices or end-of-life declarations before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current automotive solution is required. The DirectFET M4 package is suitable for designs prioritizing thermal efficiency and compact form factors. Ensure the gate drive circuitry can handle the specified gate charge levels. Verify that the system's thermal management strategy aligns with the provided thermal resistance parameters.

Single FETs, MOSFETs Part Context

This part belongs to the Gen 10.7 MOSFET family, representing advanced silicon technology optimized for automotive applications. The DirectFET M4 packaging integrates the die directly onto the substrate for superior heat dissipation compared to traditional packages. This series is designed to meet the rigorous demands of modern electric and hybrid vehicle powertrains.