AUIRLR2905TRL

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:cc337ab267bf Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLR2905TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR2905TRL

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR2905TRL

AUIRLR2905TRL

Single FETs, MOSFETs Overview

The AUIRLR2905TRL is an automotive-grade N-channel HEXFET power MOSFET utilizing advanced planar technology. It features a D-Pak (TO-252) surface-mount package with a maximum drain-source voltage of 55 V and a continuous drain current of 42 A at 25°C. The device exhibits a maximum on-resistance of 27 mΩ at 10 V gate drive and supports a junction temperature range from -55°C to +175°C. Key electrical characteristics include a total gate charge of 48 nC, a peak diode recovery dynamic dv/dt rating of 5.0 V/ns, and full avalanche rating capabilities.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
Advanced planar technology enables low on-resistance per silicon area for improved efficiency.
Logic level gate drive allows direct control by standard microcontrollers or drivers.
Fully avalanche rated with repetitive avalanche energy allowed up to the maximum junction temperature.

Single FETs, MOSFETs Applications

Automotive power switching applications
Low-side load switching circuits
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required tape and reel quantity of 3000 units. Confirm the package type corresponds to the D-Pak form factor. Ensure the component meets the necessary automotive qualification standards for the intended application environment. Cross-reference the datasheet revision history to confirm the technical specifications align with current manufacturing data.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-qualified N-channel MOSFET with a 55 V breakdown voltage is required. The logic level gate drive simplifies driver circuit design for 5 V or 10 V systems. Consider the thermal resistance and safe operating area limits for high-current applications. Verify that the package dimensions fit the available PCB footprint constraints.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. The 'A' prefix indicates automotive grade qualification, while the 'TRL' suffix specifies the tape and reel packaging format. It shares core electrical characteristics with the non-automotive IRLR2905 variant but adheres to stricter automotive reliability standards.

Single FETs, MOSFETs Replacement Considerations

The IRLR2905 serves as the industrial equivalent with identical electrical specifications but lacks automotive qualification. For automotive replacements, verify that any substitute maintains AEC-Q101 compliance and matches the pinout configuration of the D-Pak package.