AUIRLR3636TRL

$1.12

Description：MOSFET N-CH 60V 99A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:d75454ee0b58 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AUIRLR3636TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 99A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR3636TRL

Description：MOSFET N-CH 60V 99A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 4.5 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：3779 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：143W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR3636TRL

AUIRLR3636TRL

Single FETs, MOSFETs Overview

The AUIRLR3636 is an automotive-grade N-channel HEXFET power MOSFET in a D-Pak (TO-252) package. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 99A at 25°C case temperature, limited to 50A by the package. The device offers a typical on-resistance of 5.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V. It supports a junction temperature range from -55°C to +175°C with a maximum power dissipation of 143W.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Logic level gate drive capability for efficient control
Fast switching speed with improved repetitive avalanche rating
Advanced process technology achieving ultra-low on-resistance

Single FETs, MOSFETs Applications

Automotive power management systems
High-efficiency motor control applications
DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TRLPBF or TRL against the required packaging format, as standard tubes are also available. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target automotive application. Ensure thermal design accounts for the package-limited current rating under operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses and robust avalanche performance are critical. The logic-level gate drive simplifies driver circuit design compared to standard threshold devices. Consider the D-Pak package constraints for current handling if case temperatures exceed 25°C.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, known for advanced silicon processing techniques. It is specifically engineered for automotive environments requiring high reliability and efficiency. The device integrates fast switching characteristics with enhanced thermal stability for demanding power applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET series that may offer updated packaging or slight parameter variations. Verify that any substitute maintains the required AEC-Q101 qualification and matches the D-Pak footprint dimensions.