AUIRLS4030-7TRL

Single FETs, MOSFETs Overview

The AUIRLS4030-7TRL is a 100V single N-channel HEXFET power MOSFET from Infineon Technologies, designed for automotive applications. It features an ultra-low on-resistance of 3.9 mΩ at 10V gate drive and supports a continuous drain current of 190A. The device utilizes a D2PAK-7 surface-mount package with a junction-to-case thermal resistance of 0.4 K/W. Key electrical parameters include a maximum power dissipation of 380W, a gate charge of 87 nC at 4.5V, and avalanche energy rating of 320 mJ. It operates within a temperature range of -55°C to 175°C and meets AEC-Q101 qualification standards.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in demanding environments.
• Ultra-low on-resistance technology enables high efficiency and reduced conduction losses in power switching applications.
• Integrated avalanche capability ensures durability against inductive load switching transients.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-current DC-DC converters
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '7TRL' corresponds to the required tape-and-reel packaging configuration for automated assembly lines. Confirm that the component meets the exact AEC-Q101 grade requirements for your target automotive application zone. Ensure compatibility with standard D2PAK footprint designs during PCB layout validation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities combined with low voltage drop characteristics. The logic-level gate drive compatibility simplifies driver circuit design. Consider the thermal management requirements associated with the D2PAK package to maintain junction temperatures within safe operating limits during peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™ family of power MOSFETs, specifically engineered for automotive electronics. It represents a generation of devices optimized for high power density and reliability. The product line focuses on reducing system size and cost through improved electrical performance and ruggedness suitable for harsh automotive operating conditions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 100V VDS, 190A ID, and D2PAK-7 package dimensions. Verify equivalent RDS(on) values and thermal resistance specifications to ensure no derating is required in the existing thermal design. Check pinout compatibility before substitution.